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Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient
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10.1063/1.2953192
/content/aip/journal/apl/92/26/10.1063/1.2953192
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2953192
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of capacitors. (b) and EOT variation by increasing the oxygen partial pressure at various LPOA conditions (closed symbol) and HPOA conditions (open symbol).

Image of FIG. 2.
FIG. 2.

(a) Comparison of XPS oxygen depth profiles of a stack between LPOA with an EOT increase and HPOA. (b) XPS spectra of O at W surface and W bulk. At the W top surface, all samples show an identical oxygen atomic percentage. In contrast, at W bulk, samples show different oxygen atomic percentage. The inset of Fig. 2(b) shows the line resistance after each annealing.

Image of FIG. 3.
FIG. 3.

Changes in the flatband voltage at the capacitors as oxygen partial pressure (total annealing pressure) increases. From the flatband voltage data, we calculated a wide range of the effective work function values from , as shown in the inset.

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/content/aip/journal/apl/92/26/10.1063/1.2953192
2008-07-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2953192
10.1063/1.2953192
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