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Enhanced characteristics of blue light-emitting diodes by using selective activation to modulate the lateral current spreading length
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10.1063/1.2953700
/content/aip/journal/apl/92/26/10.1063/1.2953700
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2953700

Figures

Image of FIG. 1.
FIG. 1.

Hole concentrations of samples as a function of the thickness of the Ti layer.

Image of FIG. 2.
FIG. 2.

Cross-sectional view of the MQW LEDs prepared using the selective activation technique, indicating the possible current paths from the -bonding pad to the -electrode.

Image of FIG. 3.
FIG. 3.

SIMS depth profiles of Ga, N, Mg, and Ti. These SIMS data are for layer capped with 50, 100, and Ti, respectively.

Image of FIG. 4.
FIG. 4.

Slope efficiencies and current densities of the MQW LEDs presented as a function of the current spreading length when operated at .

Tables

Generic image for table
Table I.

Hole concentrations of samples after annealing as a function of the capped metal film.

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/content/aip/journal/apl/92/26/10.1063/1.2953700
2008-07-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced characteristics of blue InGaN∕GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2953700
10.1063/1.2953700
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