Full text loading...
Hole concentrations of samples as a function of the thickness of the Ti layer.
Cross-sectional view of the MQW LEDs prepared using the selective activation technique, indicating the possible current paths from the -bonding pad to the -electrode.
SIMS depth profiles of Ga, N, Mg, and Ti. These SIMS data are for layer capped with 50, 100, and Ti, respectively.
Slope efficiencies and current densities of the MQW LEDs presented as a function of the current spreading length when operated at .
Hole concentrations of samples after annealing as a function of the capped metal film.
Article metrics loading...