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Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy
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10.1063/1.2953702
/content/aip/journal/apl/92/26/10.1063/1.2953702
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2953702
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Temperature calibration of the B source vs B concentration . (b) SIMS profile of a layer grown by MBE at .

Image of FIG. 2.
FIG. 2.

(a) TEM image of one of the thinnest NWs (inset: TEM diffraction pattern). (b) TEM image of a relatively thicker NW. All images correspond to an intended B concentration of .

Image of FIG. 3.
FIG. 3.

(a) Schematic of the electrical measurement setup. (b) A SEM image of a contacted NW. (c) Band diagram of the NW and the layered structure underneath.

Image of FIG. 4.
FIG. 4.

curves of (a) a lightly doped NW (inset: nominally undoped NW). (b) Two medium doped NWs. (c) Two highly doped NWs. (d) Plot of the apparent and net doping concentrations vs the intended doping concentration of the NWs. (e) Plot of the resistance per unit length vs NW diameter and fitting with Eq. (3) for the intended doping level of . (f) Schematic of the cross section of a partially depleted NW.

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/content/aip/journal/apl/92/26/10.1063/1.2953702
2008-07-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2953702
10.1063/1.2953702
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