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(a) Temperature calibration of the B source vs B concentration . (b) SIMS profile of a layer grown by MBE at .
(a) TEM image of one of the thinnest NWs (inset: TEM diffraction pattern). (b) TEM image of a relatively thicker NW. All images correspond to an intended B concentration of .
(a) Schematic of the electrical measurement setup. (b) A SEM image of a contacted NW. (c) Band diagram of the NW and the layered structure underneath.
curves of (a) a lightly doped NW (inset: nominally undoped NW). (b) Two medium doped NWs. (c) Two highly doped NWs. (d) Plot of the apparent and net doping concentrations vs the intended doping concentration of the NWs. (e) Plot of the resistance per unit length vs NW diameter and fitting with Eq. (3) for the intended doping level of . (f) Schematic of the cross section of a partially depleted NW.
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