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Extraordinary electroconductance in metal-semiconductor hybrid structures
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10.1063/1.2955503
/content/aip/journal/apl/92/26/10.1063/1.2955503
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2955503
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Panels (a) and (b) are Schematics, of the top view and side view of an EEC device, respectively with and . Panel (c) is the room temperature characteristic of the Schottky interface. Inset: ideal factor from a typical EEC device, an ideal Schottky diode, A and a Schottky diode with a thick oxide interfacial layer, B. (A and B are adapted from Ref. 11). The lines are guides to the eye.

Image of FIG. 2.
FIG. 2.

Main panel shows the room temperature four-lead resistance of a sample with and under for . The symbols have the following designations: , ◆; , △; , ▲; , ○; , ●; , ◻; and , ◼. Inset: the sensitivity of the device for , ○; , △; , ◇; , △; , ◻.

Image of FIG. 3.
FIG. 3.

The geometry dependence of the EEC effect. The symbols correspond to , ●; 5, ◻; 10, ▲; 14, △. The mesa radius for each device is .

Image of FIG. 4.
FIG. 4.

Inset: schematics of the two-layer EEC structure under reverse bias. Main panel: the solid lines are fits of Eq. (3) to experiment for samples with under reverse bias. The symbols correspond to the observed resistances adjusted by with , ◼; (2, ), ◻; (3, ), ●; (4, ), ○; (5, ), ▲; (6, ), △; (7, ), ▼; (8, ), ▽; (9, ), ◆; (10, ), ◇; (11, ), ▯; (12, ), ◁; (13, ), ▶; (14, ) ▷.

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/content/aip/journal/apl/92/26/10.1063/1.2955503
2008-07-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extraordinary electroconductance in metal-semiconductor hybrid structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2955503
10.1063/1.2955503
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