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Controlled fabrication of single electron transistors from single-walled carbon nanotubes
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10.1063/1.2955520
/content/aip/journal/apl/92/26/10.1063/1.2955520
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2955520
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the nanotube SET device. The nanotube bends at the edges of the gate electrode to create two tunnel barriers (black) a distance apart. The central island (red) in between the tunnel barriers above the aluminum oxide, is the defined quantum dot. The gate defines the quantum dot and controls its operation.

Image of FIG. 2.
FIG. 2.

Device A: (a) tapping mode atomic force micrograph with wide Al local gate (LG) and Pd source (S) and drain (D) top contacts (scale bar is ). (b) curves at two different gate voltages at , showing CB and single electron tunneling. (c) Current vs local gate voltage showing several reproducible peaks for several temperatures (bottom to top: 4.2, 12, 20, 35, 50, 75, 100, and ). Peaks begin to wash out around , for which .

Image of FIG. 3.
FIG. 3.

Differential conductance as a function of local gate voltage and source drain voltage at for two devices: (a) device A and (b) device B. Coulomb diamonds are outlined by the white dotted lines for a guide to the eye. The measured charging energy from the diamond height is and energy level spacings are indicated by arrows in both diagrams.

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/content/aip/journal/apl/92/26/10.1063/1.2955520
2008-07-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled fabrication of single electron transistors from single-walled carbon nanotubes
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2955520
10.1063/1.2955520
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