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(a) Schematic view and (b) layer structure of the detector grown on a semi-insulating GaAs (100) substrate. Electrons and holes photoexcited at G are transported by the SAW [see the inset of (a)] in the channel in between the metal guides ( and ) toward the charge detection areas formed by the - and -type contacts.
(a) Measured (red solid line) and calculated (blue dashed line) optical reflectivity as well as the calculated absorptivity (, dash-dotted line) of the structure in Fig. 1(b). (b) PL spectra at the generation point G as a function of the nominal rf power applied to the IDT for a light excitation intensity . The inset shows the PL intensity at as a function of and .
Dependence of the currents and on acoustic power for different voltages applied to the contacts [see Fig. 1(a)]. The right vertical scale shows the collection efficiency [see Eq. (1)]. The experiments were carried out at with the laser spot located away from the contacts.
(a) Two-dimensional plot of recorded at while scanning a -wide laser spot over the detector [see Fig. 1(a)]. The outlined regions indicate the metallization areas. (b) Current profile recorded along the arrow at in (a) with , , and . The right scale indicates the collection efficiency.
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