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(a) Cross-sectional schematic diagram of the MM waveguide QCL with side absorbers. Layer thicknesses are marked in parentheses; the GaAs layers are doped to . The side absorbers consist of exposed plasmon layer at the edges of the top metal cladding and are marked with arrows. (b) Facet reflectivity as a function of lateral mode order for a -thick and -wide MM waveguide. (c) Cross-section plots of the component of two lateral waveguide modes. The upper plot is the mode and the lower plot is the mode. The metal waveguide claddings are shaded in vertical stripes. (d) Threshold gain as a function of lateral mode order for laser structures with and without side absorbers.
(a) Light output as a function of current of a representative MM waveguide device with no side absorbers. Upper inset: current-voltage characteristics of the device at . Lower inset: characteristics of the device close to the maximum operating temperature. (b) characteristics of a representative MM waveguide device with side absorbers. Upper inset: image of the top of a MM waveguide device with side absorbers delineated by arrows. Lower inset: characteristics of the device close to the maximum operating temperature.
Representative spectra of lasers with (top) and without (bottom) side absorbers operating at a temperature of and a current density of .
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