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PbSe nanocrystal and thin film characteristics. (a) Absorption spectrum from PbSe QDs dissolved in a solvent (inset: transmission electron microscopy image of the synthesized PbSe QDs), (b) device structure (upper), and SEM image of the PbSe film [(1) cross section and (2) Top view].
properties of the PbSe thin film device. (a) curve of hydrazine, the treated and untreated PbSe nanocrystal film photoconductors under of AM1.5G illumination (inset: generated photocurrent from hydrazine treated PbSe photoconductor under of AM1.5G illumination, active device area is ). (b) Hysteresis obtained for different directions of the scan.
Multiple exciton generation and extraction in a PbSe nanocrystal device. (a) Normalized external quantum yield of the hydrazine treated PbSe nanocrystal film under bias plotted with the previously reported optically determined MEG measurements from PbSe nanocrystals in solution ( and from Refs. 18 and 21 ). (b) Gated illumination response of PbSe nanocrystal film for ( absorption) and ( absorption) illuminations.
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