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TEM image of near-lattice-matched SQW grown on a sapphire substrate.
PL spectra of SQWs with thin lower barriers on sapphire substrates using (a) Xe lamp at and (b) laser excitation at RT. The QW emission peaks are indicated by the arrows.
QW emission energy as a function of well width for samples grown on sapphire and FS-GaN substrates. The dashed lines are guides for the eye indicating different gradients for the two types of substrates.
RT PL spectra of the SQWs grown simultaneously on GaN-on-sapphire templates and FS-GaN substrates, excited by the laser. The thickness of the lower barriers is .
Emission energies as a function of excitation power density for SQWs grown on (a) sapphire and (b) FS-GaN substrates using laser excitation at room temperature.
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