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High-performance visible-blind GaN-based photodetectors
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10.1063/1.2837645
/content/aip/journal/apl/92/3/10.1063/1.2837645
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/3/10.1063/1.2837645
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current voltage measurements of a photodetector with a diameter.

Image of FIG. 2.
FIG. 2.

Responsivity of a diameter photodetector for different reverse bias voltages.

Image of FIG. 3.
FIG. 3.

Voltage dependence of the quantum efficiency and capacitance for diode.

Image of FIG. 4.
FIG. 4.

Spectral quantum efficiency of the photodetector after 0, 20, and recess etch of the top dielectric film.

Image of FIG. 5.
FIG. 5.

Temporal pulse response of the micron diameter photodiodes under reverse bias voltage and the corresponding frequency response (inset).

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/content/aip/journal/apl/92/3/10.1063/1.2837645
2008-01-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance visible-blind GaN-based p-i-n photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/3/10.1063/1.2837645
10.1063/1.2837645
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