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Schematics of the MIG mechanism. (a) The first reaction between Ni and Si forms a silicide layer. (b) Low Si supply causes the Ni diffusion into the sputtered amorphous Si . (c) High Si supply forms the staggered layer and migration leaves the crystalline Si . (d) The further Si excess grows the above the layer.
(a) TEM micrograph of the silicide layers and Si films formed by two different Si supply steps. Double Si films were grown by migration (lower Si) and mediation (upper Si). EDS maps of (b) Si, (c) oxygen, and (d) Ni.
High resolution TEM micrographs. (a) NiSi, (b) , and (c) lower Si. The inset is an indexing of the diffraction pattern marked as a dotted line.
High resolution TEM micrographs. (a) and (b) upper Si. The inset is an indexing of the diffraction pattern marked as a dotted line.
results on the fabricated solar cell with and without an illumination. The inset is a schematic of the device connection.
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