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Three-dimensional crystalline Si film growth by the Ni silicide mediation
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10.1063/1.2828202
/content/aip/journal/apl/92/4/10.1063/1.2828202
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2828202
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematics of the MIG mechanism. (a) The first reaction between Ni and Si forms a silicide layer. (b) Low Si supply causes the Ni diffusion into the sputtered amorphous Si . (c) High Si supply forms the staggered layer and migration leaves the crystalline Si . (d) The further Si excess grows the above the layer.

Image of FIG. 2.
FIG. 2.

(a) TEM micrograph of the silicide layers and Si films formed by two different Si supply steps. Double Si films were grown by migration (lower Si) and mediation (upper Si). EDS maps of (b) Si, (c) oxygen, and (d) Ni.

Image of FIG. 3.
FIG. 3.

High resolution TEM micrographs. (a) NiSi, (b) , and (c) lower Si. The inset is an indexing of the diffraction pattern marked as a dotted line.

Image of FIG. 4.
FIG. 4.

High resolution TEM micrographs. (a) and (b) upper Si. The inset is an indexing of the diffraction pattern marked as a dotted line.

Image of FIG. 5.
FIG. 5.

results on the fabricated solar cell with and without an illumination. The inset is a schematic of the device connection.

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/content/aip/journal/apl/92/4/10.1063/1.2828202
2008-01-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three-dimensional crystalline Si film growth by the Ni silicide mediation
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2828202
10.1063/1.2828202
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