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Effects of bottom electrode on structural and dielectric properties of films fabricated by sol-gel method
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10.1063/1.2837534
/content/aip/journal/apl/92/4/10.1063/1.2837534
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2837534
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of CCTO grown on LNO and Pt.

Image of FIG. 2.
FIG. 2.

Surface and cross-sectional SEM images of CCTO thin films grown on [(a) and (c)] LNO and [(b) and (d)] Pt.

Image of FIG. 3.
FIG. 3.

The frequency dependence of capacitance and dielectric loss of CCTO thin films on LNO.

Image of FIG. 4.
FIG. 4.

The complex impedance plane plot for the CCTO thin films grown on LNO. The upper inset shows the equivalent circuit used to represent the electrical properties of grain and grain-boundary effects and the lower inset shows the intercept on axis.

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/content/aip/journal/apl/92/4/10.1063/1.2837534
2008-01-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of LaNiO3 bottom electrode on structural and dielectric properties of CaCu3Ti4O12 films fabricated by sol-gel method
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2837534
10.1063/1.2837534
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