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Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
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10.1063/1.2837544
/content/aip/journal/apl/92/4/10.1063/1.2837544
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2837544
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic top view of the device. (b) Schematic cross section along the line . (c) Scanning-electron-microscope image of the device before the upper gate formation. Repetitive pulse voltage denoted by is applied to the central gate and the constant negative voltage is applied to the right gate. The left-gate voltage is fixed at . (d) Schematic diagram of the operation of the SE ratchet.

Image of FIG. 2.
FIG. 2.

(a) Normalized current under zero source-drain bias at , 25, 50, and . The first derivative is shown for . Contour plots of the SE ratchet current for (b) and , and (c) and at . The lower-right region in (b) corresponds to the electron leakage from the drain over the drain-side barrier, resulting from the potential increase of the drain by a large negative .

Image of FIG. 3.
FIG. 3.

Nanoampere SE pumping demonstrated using another device at , (low), (high), and .

Image of FIG. 4.
FIG. 4.

(a) Calculated first and second derivatives fitted to the experimental results for step at . The inset depicts a schematic diagram of the nonadiabatic electron capture. (b) Rise time dependence at . The inset describes the shift of the current steps (the peak positions in the first derivative).

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/content/aip/journal/apl/92/4/10.1063/1.2837544
2008-01-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2837544
10.1063/1.2837544
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