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Schematic conduction band diagram of an injection and active part at zero-bias voltage. Three InAs wells out of seven wells are doped with Si to for sample A, for sample B, and for sample C. The calculated in a repeat are for sample A, for sample B, and for sample C. The spatially direct ISB transition together with longitudinal optical phonon scattering depopulation scheme is used in the active parts.
(a) characteristics of samples A and C measured at . The cavity length of the two devices was . The observed was for sample A containing low-doped injection part, which is higher than for sample C containing high-doped injection part. (b) characteristics of the two samples measured at . Current pulses of with a repetition rate of were used for the measurements. The at were for sample A and for sample C.
EL spectra of (a) sample A and (b) sample C measured at . Current pulses at with duty cycle of 5% were used for EL measurements. Comparing with sample A containing low-doped injection parts, the InAs IB-EL was not detected for sample C containing high-doped injection parts. The inset of Fig. 3(a) shows the polarization-resolved emission spectra of sample A .
Emission spectrum of sample B measured at . Current pulses of with a repetition rate of were used for the measurements. Simultaneous lasing of the IB and ISB transitions was observed. Observed ISB and IB laser emission wavelengths were 4.8 and , respectively. The inset shows characteristics as a function of temperature. Simultaneous lasing was observed up to .
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