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The PL spectra of (a) and (b) annealed at different temperatures. The bare and as-deposited oxide/ZnO films are also given. The dependence of integrated intensity of (c) band-edge and (d) DL emissions of on annealing temperature and duration.
The DLTS spectra of annealed at different temperatures.
The dependence of interface recombination velocity (hole) on annealing temperature and duration.
(a) The SIMS depth profiling of Zn before and after annealing at for . The interface of is located at . The diffusion width is defined as the width between 0.1 and 0.8 Zn SIMS signals, and it is used as the rough indicator for Zn outdiffusion. Therefore, the widths determined here are 6.16 and for the as-deposited and annealed , respectively. (b) The dependence of defect concentration, and diffusion width on annealing temperature.
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