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Effect of oxygen on the electronic configuration of heterojunctions
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10.1063/1.2838344
/content/aip/journal/apl/92/4/10.1063/1.2838344
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2838344

Figures

Image of FIG. 1.
FIG. 1.

O , Ge , and Gd high resolution XPS spectra for the as-deposited (a), annealed (b), air exposed (c), and vacuum annealed (d) thick film Ge heterojunctions, respectively.

Image of FIG. 2.
FIG. 2.

High resolution XPS spectra of a clean Ge substrate (a) and of thick sample (b). In the insets the linear extrapolation procedure of the valence band edge for the two samples.

Tables

Generic image for table
Table I.

and XPS core line positions and corresponding calculated VBO values for the as-deposited (a), annealed (b), air exposed (c), and vacuum annealed (d) heterojunctions, respectively.

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/content/aip/journal/apl/92/4/10.1063/1.2838344
2008-01-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxygen on the electronic configuration of Gd2O3∕Ge heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2838344
10.1063/1.2838344
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