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Control of resistance switching voltages in rectifying trilayer
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10.1063/1.2838350
/content/aip/journal/apl/92/4/10.1063/1.2838350
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2838350
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The asymmetrical current profile in the initial state of (, Cr, and Al) trilayer cells with . The vertical abscissa is in the logarithmic scale. The numbers shown in parenthesis are the metal work function. Inset is the experimental and calculated forward bias current density in . The notation is the ideal factor.

Image of FIG. 2.
FIG. 2.

The current profiles for the reset and set process in (a) isolated with and (b) the 1D1R series connection of with and with . The arrows in the figures depict the direction of the voltage sweep. The notations GND and DRV correspond to the electrodes connected to the ground and that used in order to drive the external voltage, respectively.

Image of FIG. 3.
FIG. 3.

Current voltage curves in the reset and set process for (a) 1R isolated and (b) the series connection of with and with . [(c) and (d)] The reset and set voltages and [(e) and (f)] current at as a function of the switching number, respectively. Here, the notations (R) and (D) denote that the trilayer is regarded as the resistance switching and Schottky diode layer, respectively. and indicate the set and reset voltages, respectively, while LRS and HRS correspond to the low and high resistance states, respectively. (a), (c), and (e) correspond to the 1R cell, while (b), (d), and (f) correspond to the 1D1R series connection.

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/content/aip/journal/apl/92/4/10.1063/1.2838350
2008-02-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2838350
10.1063/1.2838350
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