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In situ arsenic-doped selective epitaxial growth under atmospheric pressure
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10.1063/1.2838724
/content/aip/journal/apl/92/4/10.1063/1.2838724
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2838724
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SIMS profile and (b) rocking curve of the 004 Bragg reflection of in situ As-doped film. The and flow rate were 120 and , respectively.

Image of FIG. 2.
FIG. 2.

(a) As and C concentrations and (b) resistivity and growth rate as functions of the flow rate. The flow rate was .

Image of FIG. 3.
FIG. 3.

(a) As and C concentrations and (b) resistivity and growth rate as functions of the flow rate. The flow rate was .

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/content/aip/journal/apl/92/4/10.1063/1.2838724
2008-01-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ arsenic-doped Si1−yCy selective epitaxial growth under atmospheric pressure
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2838724
10.1063/1.2838724
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