1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Energy-band alignment of gate dielectric stack
Rent:
Rent this article for
USD
10.1063/1.2839314
/content/aip/journal/apl/92/4/10.1063/1.2839314
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2839314
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) the valence band (VB) spectrum of substrate. (b) The VB spectra of (I) bulk , (II) bulk , and (III) , respectively. Two valence band offsets of 1.5 and are observed for layer, as shown in the inset.

Image of FIG. 2.
FIG. 2.

Photoelectron spectra showing (a) Hf , and (b) Si of gate dielectric stack at the surface as well as in the interfacial layer (at depth), respectively.

Image of FIG. 3.
FIG. 3.

The current vs gate voltage characteristics of the MOS capacitor at various temperatures with substrate electron injection. The experimental results at higher temperatures fit the Schottky emission theory very well, as shown in the inset. (b) Leakage current density of and gate dielectrics.

Image of FIG. 4.
FIG. 4.

O spectra (inset) and its energy loss for gate dielectric stack.

Image of FIG. 5.
FIG. 5.

The schematic band alignments for and systems.

Loading

Article metrics loading...

/content/aip/journal/apl/92/4/10.1063/1.2839314
2008-01-30
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2839314
10.1063/1.2839314
SEARCH_EXPAND_ITEM