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Controlled focused electron beam-induced etching for the fabrication of sub-beam-size nanoholes
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10.1063/1.2839334
/content/aip/journal/apl/92/4/10.1063/1.2839334
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2839334
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Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of an array of nanoholes etched with using and electron beam. The numbers indicate the exposure time in seconds. Insert: diameter hole. (b) Radius of holes as a function of exposure (etching) time with a and electron beam using (diamonds) or (squares). Inset: SEM images of nanoholes with corresponding exposure time in second.

Image of FIG. 2.
FIG. 2.

Time resolved stage current measurement for six successive etch exposures with precursor (primary electron and probe ).

Image of FIG. 3.
FIG. 3.

Stage current change as a function of radius of nanoholes (primary electron and probe ). Analytic and MC models allow to determine the FWHM of the incident beam.

Image of FIG. 4.
FIG. 4.

Beam size (FWHM) as function of probe current obtained from knife edge measurements (KE) and by etch hole analysis (EHA) at primary electron energies of (a) in and (b) in and . Minimum hole diameters and saturated hole diameters are indicated.

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/content/aip/journal/apl/92/4/10.1063/1.2839334
2008-01-31
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled focused electron beam-induced etching for the fabrication of sub-beam-size nanoholes
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2839334
10.1063/1.2839334
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