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(a) SEM image of an array of nanoholes etched with using and electron beam. The numbers indicate the exposure time in seconds. Insert: diameter hole. (b) Radius of holes as a function of exposure (etching) time with a and electron beam using (diamonds) or (squares). Inset: SEM images of nanoholes with corresponding exposure time in second.
Time resolved stage current measurement for six successive etch exposures with precursor (primary electron and probe ).
Stage current change as a function of radius of nanoholes (primary electron and probe ). Analytic and MC models allow to determine the FWHM of the incident beam.
Beam size (FWHM) as function of probe current obtained from knife edge measurements (KE) and by etch hole analysis (EHA) at primary electron energies of (a) in and (b) in and . Minimum hole diameters and saturated hole diameters are indicated.
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