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Modeled CNT TFET structure with wrap-around gate used in this study. A (16,0) zigzag CNT with high- (, ) gate oxide, intrinsic channel , doped source (-type, , ) and drain (-type, , ) have been used. Source/drain doping levels can be compared to the carbon atom density in a (16,0) CNT of .
(a) Above-threshold characteristics for the CNT TFET in Fig. 1. All the optical phonon modes (LO, ZBO, and RBM) are considered simultaneously for OP scattering. LA mode is considered for AP scattering. (b) Energy-position resolved current density spectrum at confirms the reduced influence of high-energy OP scattering on dc current transport up to moderate gate biases.
(a) characteristics for the CNT TFET in Fig. 1 at and with and without phonon scattering. Simulated device temperatures are as shown in the legend. It is observed that the presence of phonons degrades the subthreshold swing. (b) Energy-position resolved current density spectrum at a device temperature of (, ). Phonon absorption assisted transport is clearly observed at the source-channel junction. Carriers thermalize after reaching the drain.
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