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The chemical and electronic structures of on Si(100)
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10.1063/1.2839377
/content/aip/journal/apl/92/4/10.1063/1.2839377
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2839377
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The annealing temperature dependence of FTIR spectra for pure and films. (a) Pure films and (b) films.

Image of FIG. 2.
FIG. 2.

Annealing-temperature dependence of XPS spectra for as-deposited film and the films annealed at 300, 500, and . (a) Y (b) O , and (c) N . N1 corresponds to bond and N2 corresponds to bonds.

Image of FIG. 3.
FIG. 3.

Tauc plots for determining the optical band gap for films annealed at temperature 300, 600, and , respectively.

Image of FIG. 4.
FIG. 4.

Valence-band photoelectron spectra of films annealed at different temperatures. (a) annealed, (b) annealed, (c) annealed, and (d) clean Si (100) substrate.

Image of FIG. 5.
FIG. 5.

Schematic illustration of the effect of nitrogen (reduced with the increasing temperature) on energy gap and band offsets.

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/content/aip/journal/apl/92/4/10.1063/1.2839377
2008-01-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The chemical and electronic structures of YOxNy on Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2839377
10.1063/1.2839377
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