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The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
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10.1063/1.2840192
/content/aip/journal/apl/92/4/10.1063/1.2840192
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2840192

Figures

Image of FIG. 1.
FIG. 1.

XRD scan in triple crystal geometry for InN layer 209L-B grown on Ga-polar GaN/sapphire template. The inset shows a section of the InN sample and the location analyzed.

Image of FIG. 2.
FIG. 2.

(a) The InN peak deconvolution indicates an asymmetric lower shoulder, which might be due to impurities. (b) Rocking curve analysis of the higher order InN peaks: (i) -RC(002), peak position with ; (ii) -RC(103), peak position with ; and (iii) -RC(302), peak position with .

Image of FIG. 3.
FIG. 3.

Raman spectra for InN layers 207L and 209L grown on N-polar and Ga-polar GaN/sapphire templates, respectively.

Image of FIG. 4.
FIG. 4.

Analysis of and modes in Raman spectrum for InN layer 209L grown on Ga-polar GaN/sapphire template.

Tables

Generic image for table
Table I.

Structural data for InN layers grown on N- and Ga-polar GaN templates.

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/content/aip/journal/apl/92/4/10.1063/1.2840192
2008-01-31
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/4/10.1063/1.2840192
10.1063/1.2840192
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