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XRD scan in triple crystal geometry for InN layer 209L-B grown on Ga-polar GaN/sapphire template. The inset shows a section of the InN sample and the location analyzed.
(a) The InN peak deconvolution indicates an asymmetric lower shoulder, which might be due to impurities. (b) Rocking curve analysis of the higher order InN peaks: (i) -RC(002), peak position with ; (ii) -RC(103), peak position with ; and (iii) -RC(302), peak position with .
Raman spectra for InN layers 207L and 209L grown on N-polar and Ga-polar GaN/sapphire templates, respectively.
Analysis of and modes in Raman spectrum for InN layer 209L grown on Ga-polar GaN/sapphire template.
Structural data for InN layers grown on N- and Ga-polar GaN templates.
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