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In situ observation of gas reemission and blister rupture during helium implantation in silicon
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10.1063/1.2839601
/content/aip/journal/apl/92/5/10.1063/1.2839601
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/5/10.1063/1.2839601
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Gas phase ionization mass spectrum recorded during stationary bombardment of an aluminum sample with a focused beam. The spectra were taken at two different base pressures in the analysis chamber. The inset shows the variation in signal at 44 upon rapidly changing, at time , from high to low pressure.

Image of FIG. 2.
FIG. 2.

Variation of the signal during bombardment of a virgin Si sample with a focused ion beam.

Image of FIG. 3.
FIG. 3.

Comparison of the measured flux of released helium with the He-to-Si concentration ratios calculated with a simple model of ion retention in the presence of sputtering. Note the double logarithmic scale.

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/content/aip/journal/apl/92/5/10.1063/1.2839601
2008-02-05
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ observation of gas reemission and blister rupture during helium implantation in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/5/10.1063/1.2839601
10.1063/1.2839601
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