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Relative resistance-pressure isotherms for films (A and B: and C: ) on Si substrate (▴, A second loading; ◼, B second loading; ●, C first loading; and ★ C second loading). The isotherms differ strongly. Images of the related microstructures are inserted.
First (◼) and second (●) loading cycles of on Si. For the first loading cycle, the measured relative resistance value jumps to 1.5 when the formerly bound film completely detaches from the substrate. For the second loading cycle, the hysteresis area is small.
Second (◼) and third (●) gas loading cycles of on Si (D) compared to the values calculated for a quasifree, glue framed electrochemical loaded film E (▴). Both films show bulklike behavior.
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