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Control of homoepitaxial Si nanostructures by locally modified surface reactivity
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) The three growth regimes seen during deposition, plotted vs the growth temperature and pressure . (b) The critical Si dose at , the surface density, and the average lateral size of Si islands for growth with (solid symbols). Also shown is data at and (open symbols); at this pressure, islands did not form at 650 or . is given in Langmuirs . The values of and were measured after .

Image of FIG. 2.
FIG. 2.

Plan view TEM images obtained during deposition at and . The growth times are ( disilane), , and , respectively. The diameters of islands and increase at and , respectively, while island does not change diameter measurably.

Image of FIG. 3.
FIG. 3.

Ex situ atomic force microscopy images obtained after deposition at , , and : (a) top view image of the surface, with in-plane directions indicated. The island density is . (b) 3D view of a symmetric Si island, with , , and . (c) Top view of an asymmetric island, the indices (identified from the angles) and edges of its facets have been superimposed. (d) Profile of an island similar to (b): the average island aspect ratio is and the rms roughness on the substrate and on island tops is only . Note that the angle expected for 113 facets is 25.2°, close to the value measured, while the angles for {112} and {114} facets are 35.3° and 19.5°, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of homoepitaxial Si nanostructures by locally modified surface reactivity