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Defect reduction by epitaxial lateral overgrowth of nanorods in ZnO/(0001) sapphire films
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10.1063/1.2841707
/content/aip/journal/apl/92/5/10.1063/1.2841707
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/5/10.1063/1.2841707
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Figures

Image of FIG. 1.
FIG. 1.

The ZnO/(0001) sapphire film following PLD: (a) SEM secondary electron image, viewed along [0001], (b) TEM micrograph of cross-sectional sample showing nanorods which are defect-free, and (c) TEM from a much thinner area than (b) showing TDs in the continuous deposit below the nanorods, imaged in two-beam conditions with . All scale bars are .

Image of FIG. 2.
FIG. 2.

(a) TEM image of a ZnO/(0001) sapphire cross section after hydrothermal growth, taken in two-beam conditions with ; the scale bar is . (b) and (c) are experimental (left) and simulated (right) CBED patterns, taken (b) near the top of the overlayer in the same sample and (c) from the underlayer in a PLD-grown sample.

Image of FIG. 3.
FIG. 3.

An incoherent boundary between the Zn-polar overlayer (top) and the O-polar underlayer, seen close to edge on. The scale bar is .

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/content/aip/journal/apl/92/5/10.1063/1.2841707
2008-02-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect reduction by epitaxial lateral overgrowth of nanorods in ZnO/(0001) sapphire films
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/5/10.1063/1.2841707
10.1063/1.2841707
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