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Multilayer bipolar field-effect transistors
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10.1063/1.2816913
/content/aip/journal/apl/92/6/10.1063/1.2816913
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2816913
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Conceptual diagram of bilayer FETs with completely separated channel and channel by introducing intermediate functional layer.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of unipolar FETs including a layer between the active layer and the source-drain electrodes. (a) -type PCBM FET and (b) -type rr-P3HT FET. For both cases, the data plotted by filled circle (red) represents the devices without and the data of filled rectangular (black) is for the devices with the layer.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of the most optimized bilayer FETs. (a) -type operation and (b) -type operation. The mobilities deduced from the linear plot of (the curve plotted by open symbol) were estimated to be in the -channel mode and in the -channel mode.

Image of FIG. 4.
FIG. 4.

Output characteristics ( plots) of the bilayer devices with and without the separating layer. The data in (a) and (b) were obtained from bilayer FETs without the separation layer (fabricated by thermal evaporation of ). The data in (c) and (d) were obtained with the separating layer (see Fig. 1).

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/content/aip/journal/apl/92/6/10.1063/1.2816913
2008-02-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multilayer bipolar field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2816913
10.1063/1.2816913
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