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Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

Nanowires obtained on coated GaAs wafers with two different surface orientations: (a) (111)B and (b) (001).

Image of FIG. 2.
FIG. 2.

Scanning electron micrographs of GaAs nanowires grown on (001) GaAs substrate coated with a (a) and (b) thick layer.

Image of FIG. 3.
FIG. 3.

Cross-sectional transmission electron microscopy analysis of the nucleation stage of GaAs nanowires. (a) High resolution TEM micrograph interface with the substrate, in the case that the GaAs wafer is coated with a layer. (b) Power spectra analysis of the different areas squared in (a), from which it is possible to deduce a perfect epitaxial relation between the substrate and the nanowire. (c) Bright Field TEM micrograph of a nanowire grown on a thick layer. The dashed line indicates the presence of a nanocrater in the region where the nanowire nucleates.

Image of FIG. 4.
FIG. 4.

Morphology of surface of the (a) after sputtering and (b) before being introduced in the MBE system, measured with atomic force microscopy. The darker regions indicate the presence of some pinholes which are present at the surface after dipping the sample in 12% HF. These pinholes appear to be related to the nucleation of the GaAs nanowires. (c) Length of the nanowires as a function of the deposition time. From the graph, it is possible to deduce an incubation time of and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires