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The layer structure of InGaAs SML QD sample. The inset shows the in-plane TEM image of SML QDs.
(a) The time-integrated PL spectrum from SML QDs at different temperatures. (b) The energy shift of the PL peak with respect to the temperature. (c) The variation of the integrated PL intensity with respect to the temperature. The dots and the solid lines in (b) and (c) represent the experimental and the fitting results, respectively.
The surface photovoltaic signal from a SML QD laser structure at room temperature.
(a) The PL transients of HTG SML InGaAs QDs detected at different emission energies at . (b) The PL decay time as a function of emission energies.
(a) The PL transient of HTG SML InGaAs QDs detected at the PL peak energies at different temperatures. (b) The temperature dependence of radiative lifetimes and nonradiative lifetimes of SML QDs.
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