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A diagonal cut through the SiC bulk unit cell: Structure and composition of the surface
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10.1063/1.2839384
/content/aip/journal/apl/92/6/10.1063/1.2839384
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2839384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Side view of the bulk truncated surface in side view with surface unit cell and bulk unit cell indicated. (b) Top view of this surface with the , , and unit cells indicated (left, right, and bottom). Hatched and cross-hatched strips indicate areas of different bond coordination of the topmost C atoms.

Image of FIG. 2.
FIG. 2.

LEED patterns of at electron energy, (a) after hydrogen etching, (b) for the phase, (c) for the phase, and (d) for the high temperature phase. (e) Differentiated AES spectra for the four phases. (f) Si and (g) C core level spectra for the four phases recorded at photon energies of 140 and , respectively. The curves underneath show the components obtained from the line-shape analysis.

Image of FIG. 3.
FIG. 3.

STM micrographs of (a) the reconstruction on (, FFT-filtered, tip bias, ) and (b) the reconstruction (, , ).

Image of FIG. 4.
FIG. 4.

(a) Normal emission VB spectra from different phases of , using photon energies of 40 and . [(b) and (c)] ARUPS recorded at emission angles (b) from to along the direction with 1° step and (c) from to along the direction with 2° steps, respectively, using a photon energy of . The surface Brillouin zone is shown at the top of panel(c).

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/content/aip/journal/apl/92/6/10.1063/1.2839384
2008-02-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A diagonal cut through the SiC bulk unit cell: Structure and composition of the 4H-SiC(11¯02) surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2839384
10.1063/1.2839384
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