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Schematic diagram of channel backscattering phenomenon in a MOSFET. When carriers are injected from source into channel, they may encounter scattering within a short distance with a potential drop of beginning from the top of source-to-channel barrier. Some carriers may be scattered back to the source, and the remaining carriers reach the drain.
The gate length and gate width dependence on extracted ballistic efficiency in the -FET.
The stress components as a function of for . The stress is the average of stress values at the channel center and the edge of the channel. Narrower width gives biaxial-like stress.
Linear resistance vs gate length. The same intercept for , , and devices indicate that all devices have the same .
Normalized vs width. The theoretical curve fits the experimental data reasonably well and indicates the cause of the higher in narrower width device to be due to smaller . This suggests that the biaxial stress is more useful in the ballistic transport device.
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