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Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
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10.1063/1.2839402
/content/aip/journal/apl/92/6/10.1063/1.2839402
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2839402
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of channel backscattering phenomenon in a MOSFET. When carriers are injected from source into channel, they may encounter scattering within a short distance with a potential drop of beginning from the top of source-to-channel barrier. Some carriers may be scattered back to the source, and the remaining carriers reach the drain.

Image of FIG. 2.
FIG. 2.

The gate length and gate width dependence on extracted ballistic efficiency in the -FET.

Image of FIG. 3.
FIG. 3.

The stress components as a function of for . The stress is the average of stress values at the channel center and the edge of the channel. Narrower width gives biaxial-like stress.

Image of FIG. 4.
FIG. 4.

Linear resistance vs gate length. The same intercept for , , and devices indicate that all devices have the same .

Image of FIG. 5.
FIG. 5.

Normalized vs width. The theoretical curve fits the experimental data reasonably well and indicates the cause of the higher in narrower width device to be due to smaller . This suggests that the biaxial stress is more useful in the ballistic transport device.

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/content/aip/journal/apl/92/6/10.1063/1.2839402
2008-02-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2839402
10.1063/1.2839402
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