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Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
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10.1063/1.2839402
/content/aip/journal/apl/92/6/10.1063/1.2839402
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2839402
/content/aip/journal/apl/92/6/10.1063/1.2839402
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/content/aip/journal/apl/92/6/10.1063/1.2839402
2008-02-13
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2839402
10.1063/1.2839402
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