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Nonvolatile memory characteristics influenced by the different crystallization of Ni–Si and Ni–N nanocrystals
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10.1063/1.2841049
/content/aip/journal/apl/92/6/10.1063/1.2841049
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2841049

Figures

Image of FIG. 1.
FIG. 1.

The cross-sectional transmission electron microscope analysis of the STD (a) and after annealing temperature (b) that all contain separated NCs embedded in the nitride layer.

Image of FIG. 2.
FIG. 2.

(a) N x-ray photoelectron spectroscopy (XPS) analysis of the nanocrystals (Empty circles and straight line indicate experimental and fitting results, respectively). (b) X-ray diffraction (XRD) analysis of the nanocrystals during different thermal annealing temperature.

Image of FIG. 3.
FIG. 3.

(a) hysteresis of nonvolatile Ni–N NCs memories. The memory window was under operation and the inset was a simple energy band diagram. (b) hysteresis of nonvolatile Ni–Si NCs memories. The memory window was under operation and the inset was a simple energy band diagram.

Tables

Generic image for table
Table I.

Comparison table for the memory window, retention, and endurance. The initial memory window was fixed the same value for retention and endurance test.

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/content/aip/journal/apl/92/6/10.1063/1.2841049
2008-02-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memory characteristics influenced by the different crystallization of Ni–Si and Ni–N nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2841049
10.1063/1.2841049
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