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The cross-sectional transmission electron microscope analysis of the STD (a) and after annealing temperature (b) that all contain separated NCs embedded in the nitride layer.
(a) N x-ray photoelectron spectroscopy (XPS) analysis of the nanocrystals (Empty circles and straight line indicate experimental and fitting results, respectively). (b) X-ray diffraction (XRD) analysis of the nanocrystals during different thermal annealing temperature.
(a) hysteresis of nonvolatile Ni–N NCs memories. The memory window was under operation and the inset was a simple energy band diagram. (b) hysteresis of nonvolatile Ni–Si NCs memories. The memory window was under operation and the inset was a simple energy band diagram.
Comparison table for the memory window, retention, and endurance. The initial memory window was fixed the same value for retention and endurance test.
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