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XRD curve for the GaGdN sample grown at with Gd concentration of 12.5%.
function of the edge XAFS for the GaGdN layer with Gd concentration of 6.5%.
Fourier transform of the function for the edge XAFS oscillation in Fig. 2.
Room temperature curves for the GaGdN layers grown at with different Gd concentrations.
Room temperature curves for (a) Si-doped and (b) nondoped GaGdN samples grown at with Gd concentration of 8.9%. Inset shows the expanded curves.
The relationship between Gd concentration and saturation magnetization for the GaGdN samples grown at .
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