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Analysis of ballistic monolayer and bilayer graphene field-effect transistors
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10.1063/1.2841664
/content/aip/journal/apl/92/6/10.1063/1.2841664
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2841664
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The cross section of the modeled monolayer (bilayer) graphene MOSFET. The source and drain extensions are doped to type, and the channel is intrinsic. (b) The sketches of the equilibrium potential profiles, , and the local bandstructure with the transverse wave vector . The dotted and solid lines in the band structure indicate the binding states and the antibinding states, respectively.

Image of FIG. 2.
FIG. 2.

The source-drain conductance versus the gate voltage at . The dashed curve is for the monolayer MOSFET, and the solid curve is for the bilayer MOSFET. The channel length is .

Image of FIG. 3.
FIG. 3.

The minimum conductance (the unmarked curves) and the on-state conductance (the curves with circles) vs the channel length for the monolayer MOSFET (the dashed curves) and the bilayer MOSFET (the solid curves).

Image of FIG. 4.
FIG. 4.

The source-drain currents vs the gate voltage at and . The channel length is . The current of the monolayer device saturates at , due to “source exhaustion,” in which the current is limited by the finite doping density in the source. The band profile of the monolayer MOSFET at and is shown in the inset.

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/content/aip/journal/apl/92/6/10.1063/1.2841664
2008-02-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of ballistic monolayer and bilayer graphene field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2841664
10.1063/1.2841664
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