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Sequence of mechanical transfer of millimeter-long suspended SWCNTs from Si substrate onto flexible substrate: (a) preparation of suspended millimeter-long SWCNTs on preetched Si substrate (the size of the fabricated through hole: ); (b) prepare a flexible substrate with a trench between two prepatterned electrodes; (c) insert flexible substrate into the through hole from behind to transfer suspended SWCNTs onto flexible substrates; (d) remove flexible substrate from the front face to complete fabrication of the flexible sensor. The sensor consists of a flexible substrate with majority of a SWCNT in contact with electrodes.
(a) Optical photo of a silicon chip with a rectangular through hole and a flexible PE substrate with electrodes on one surface. The inset shows the surface profile of the flexible substrate with a trench (typically wide, deep). (b) Three overlapped scanning electron microscope (SEM) images of millimeter-long, suspended SWCNTs on the silicon chip. The gas flowing direction was from left to right using the CVD synthesis process. To obtain clear observation for long suspended SWCNTs, the surface of the SWCNTs was coated in situ by nanocrystalline carbon. The inset shows a transferred SWCNT (marked by an arrow) over the trench on the flexible substrate.
(a) Measured free end displacement of cantilever beam. (b) Dynamic strain response of SWCNT strain sensor subjected to three different strains at . (c) Dynamic strain response of SWCNT strain sensor at strain of 0.004% and at .
Normalized change in piezoresistance as a function of strain. Inset: step response of SWCNT strain sensor.
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