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Enhanced green laser activation by antireflective gate structures in panel transistors
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10.1063/1.2842417
/content/aip/journal/apl/92/6/10.1063/1.2842417
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2842417
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Figures

Image of FIG. 1.
FIG. 1.

(a) Simulated transmittance spectrum for incident light through gate structures to channels. (b) Energy distribution associated with grain trap-state densities in TFTs that were made on CLC poly-Si and activated by FA and front-side green laser irradiation at . (c) Cross-sectional transmission electron microscopic image of representative laser-activated TFT.

Image of FIG. 2.
FIG. 2.

Channel width-normalized on resistance of TFTs that were made on CLC poly-Si and activated by front-side green laser irradiation at (a) , (b) , and (c) , as well as by (d) FA vs channel length.

Image of FIG. 3.
FIG. 3.

(a) Transfer characteristics (taken at and ) and transconductance curves (taken at ); also, curves (taken at ) of TFTs that were activated by front-side green laser irradiation at 2.5 and . (b) Output characteristics of TFTs that were made on CLC poly-Si and activated by FA and front-side green laser irradiation at .

Image of FIG. 4.
FIG. 4.

(a) Threshold voltage and subthreshold slope for TFTs that were made on CLC poly-Si, activated by FA and front-side green laser irradiation at . (b) Degradation of of TFTs that were made on CLC poly-Si and activated by front-side green laser irradiation at 2.5 and during HCS.

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/content/aip/journal/apl/92/6/10.1063/1.2842417
2008-02-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced green laser activation by antireflective gate structures in panel transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2842417
10.1063/1.2842417
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