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GaN doped with neodymium by plasma-assisted molecular beam epitaxy
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10.1063/1.2844850
/content/aip/journal/apl/92/6/10.1063/1.2844850
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2844850
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The Nd atomic percent from both SIMS and RBS data plotted vs inverse cell temperature. The inset plots the room temperature PL intensity for the peak within the transition vs the Nd cell temperature (°C).

Image of FIG. 2.
FIG. 2.

The low temperature PL from for GaN:Nd pumped at showing the characteristic Nd transitions.

Image of FIG. 3.
FIG. 3.

Two XRD scans of GaN:Nd layers showing the GaN (0002) reflection relative to the sapphire substrate (0006) reflection.

Image of FIG. 4.
FIG. 4.

The log of the PL spectra at for the transition pumped above and below the GaN bandgap. The additional peaks from pumping are shaded.

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/content/aip/journal/apl/92/6/10.1063/1.2844850
2008-02-13
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN doped with neodymium by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2844850
10.1063/1.2844850
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