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The Nd atomic percent from both SIMS and RBS data plotted vs inverse cell temperature. The inset plots the room temperature PL intensity for the peak within the transition vs the Nd cell temperature (°C).
The low temperature PL from for GaN:Nd pumped at showing the characteristic Nd transitions.
Two XRD scans of GaN:Nd layers showing the GaN (0002) reflection relative to the sapphire substrate (0006) reflection.
The log of the PL spectra at for the transition pumped above and below the GaN bandgap. The additional peaks from pumping are shaded.
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