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Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities
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10.1063/1.2844860
/content/aip/journal/apl/92/6/10.1063/1.2844860
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2844860
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Current-voltage dependence of the microcavity diode at . (b) Emission spectra recorded at for electrical (top) injection with current of and optical excitation (bottom) with HeNe laser of power.

Image of FIG. 2.
FIG. 2.

(a) EL spectra as a function of detection angle in the range from to . (b) Dispersion of LP and UP peaks observed in EL (open) and PL (solid). The full lines are fit to the observed dispersions using a two mode model of coupled exciton and photon oscillators. The dispersions of the uncoupled photon and exciton modes deduced from the fit to the polariton dispersions are given by the dotted lines.

Image of FIG. 3.
FIG. 3.

(a) EL spectra as function of current. (b) The intensity of LP and UP peaks vs current.

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/content/aip/journal/apl/92/6/10.1063/1.2844860
2008-02-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2844860
10.1063/1.2844860
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