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High work function materials for source/drain contacts in printed polymer thin film transistors
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/content/aip/journal/apl/92/6/10.1063/1.2857461
2008-02-14
2014-08-27

Abstract

Studies of materials for source-drain electrodes in ink-jet printed polymer-based thin film transistors(TFTs) are reported. Two systems are studied: a blend of Agnanoparticles with poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) and an ethylene glycol-doped PEDOT:PSS solution (modified-PEDOT). The semiconductor used is the polythiophene derivative poly [-bis(3-dodecyl-2-thienyl)-2,-bithiophene]. PEDOT:Ag blends and modified-PEDOT yield TFTs with mobilities around and , respectively, subthreshold slopes around /decade and on-to-off current ratios of . Both systems show considerable improvement over printed TFTs with Agnanoparticle source-drain electrodes. Results on film resistivity and morphology are discussed along with device characteristic analysis.

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Scitation: High work function materials for source/drain contacts in printed polymer thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2857461
10.1063/1.2857461
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