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Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films
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10.1063/1.2857465
/content/aip/journal/apl/92/6/10.1063/1.2857465
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2857465
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Figures

Image of FIG. 1.
FIG. 1.

(a) Effective minority carrier lifetime , (b) open circuit voltage , and (c) fill factor (FF) of silicon heterojunction cells on Si (100) and (111) wafers with Si:H layer deposited on both sides by rf and dc plasma process with varying to ratio . At (region I), and FF exhibit plasma process dependence, while at (region III), and show wafer orientation dependence.

Image of FIG. 2.
FIG. 2.

Comparison of FTIR spectra of thick Si:H layers grown by rf and dc plasma process with different .

Image of FIG. 3.
FIG. 3.

(a) Imaginary part of pseudodielectric function and (b) Tauc’s plot as a function of photon energy for the Si:H layers deposited with different and on different wafer orientations. Absorption coefficient was determined from optical constants obtained from VASE.

Image of FIG. 4.
FIG. 4.

characteristics of silicon heterojunction cells on -type polished FZ (100) and -type textured Cz wafers as measured by NREL.

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/content/aip/journal/apl/92/6/10.1063/1.2857465
2008-02-13
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2857465
10.1063/1.2857465
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