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(a) Effective minority carrier lifetime , (b) open circuit voltage , and (c) fill factor (FF) of silicon heterojunction cells on Si (100) and (111) wafers with Si:H layer deposited on both sides by rf and dc plasma process with varying to ratio . At (region I), and FF exhibit plasma process dependence, while at (region III), and show wafer orientation dependence.
Comparison of FTIR spectra of thick Si:H layers grown by rf and dc plasma process with different .
(a) Imaginary part of pseudodielectric function and (b) Tauc’s plot as a function of photon energy for the Si:H layers deposited with different and on different wafer orientations. Absorption coefficient was determined from optical constants obtained from VASE.
characteristics of silicon heterojunction cells on -type polished FZ (100) and -type textured Cz wafers as measured by NREL.
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