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Nitric acid pretreatment for the passivation of boron emitters for -type base silicon solar cells
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10.1063/1.2870202
/content/aip/journal/apl/92/6/10.1063/1.2870202
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2870202

Figures

Image of FIG. 1.
FIG. 1.

Schematic layout of the fabricated solar cells (a) and lifetime test devices (b).

Image of FIG. 2.
FIG. 2.

IQE data of -type solar cells fabricated using different surface passivating layers based on PECVD method.

Image of FIG. 3.
FIG. 3.

Effective lifetime of minority charge carriers as a function of injection level measured using QSSPC setup performed on lifetime test devices [see Fig. 1(b)] before (empty symbols) and after (filled symbols) firing step.

Image of FIG. 4.
FIG. 4.

Accelerated ageing test of solar cells passivated using either a layer or a stack of nitric acid layers (see legend).

Tables

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Table I.

Mean values and 95% Tukey HSD intervals (Ref. 15) (for efficiency) of the solar cells parameters measured under STC (AM1.5G, , ).

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/content/aip/journal/apl/92/6/10.1063/1.2870202
2008-02-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/6/10.1063/1.2870202
10.1063/1.2870202
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