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The RD spectra measured at room temperature for the as-grown sample (solid) and the sample after annealing (dashed). The HH, LH, and GaAs features are indicated by arrows from left to right. The inset shows the AFM image of InAs structures for the as-grown samples.
The PL spectra for the sample after annealing at different temperatures; the peaks are indicated by arrows. The lines in the circle from right to left are the results for 15, 60, 120, 135, and . The inset shows the temperature dependent PL behavior of the sample after annealing. The solid symbols are experimental data, and the solid line is theoretical simulation based on the model in Ref. 10.
The schematic of the nanorings grown by droplet epitaxy and the corresponding band structure.
(a) Average densities of InAs rings from AFM measurement; (b) variation of the second derivative RD spectrum with respect to wavelength with the samples indicated by the color contrast. The squares, circles, and triangles indicate the wavelengths of the LH related transition, HH related transition, and GaAs band edge, respectively
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