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Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors
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/content/aip/journal/apl/92/7/10.1063/1.2836790
2008-02-20
2014-10-21

Abstract

The effect of morphology and microstructure on the emission characteristics of ambipolar light-emitting field-effect transistors is studied using the polyfluorene copolymer F8BT [poly(9,9-di--octylfluorene-alt-benzothiadiazole)] as a model system. Different intensity distributions of the emission zones of amorphous, polycrystalline, and aligned F8BT films are demonstrated. Electroluminescence maps of the channel region are produced by overlaying a series of images recorded during gate voltage sweeps. They show a correlation to the microcrystalline structure of the F8BT and are assumed to visualize the current density distribution within the transistor channel.

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Scitation: Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2836790
10.1063/1.2836790
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