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Electroluminescence imaging and microstructure of organic light-emitting field-effect transistors
2.A. C. Morteani, A. S. Dhoot, J. S. Kim, C. Silva, N. C. Greenham, C. Murphy, E. Moons, S. Cina, J. H. Burroughes, and R. H. Friend, Adv. Mater. (Weinheim, Ger.) 15, 1708 (2003).
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21.Certain equipment, instruments, or materials are identified in this paper in order to adequately specify the experimental details. Such identification does not imply recommendation by the National Institute of Standards and Technology nor does it imply the materials are necessarily the best available for the purpose.
See EPAPS Document No. E-APPLAB-92-022804
for additional experimental details and results. This document can be reached through a direct link in the online article’s HTML reference section or via the EPAPS homepage (http://www.aip.org/pubservs/epaps. html).[Supplementary Material]
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The effect of morphology and microstructure on the emission characteristics of ambipolar light-emitting field-effect transistors is studied using the polyfluorene copolymer F8BT [poly(9,9-di--octylfluorene-alt-benzothiadiazole)] as a model system. Different intensity distributions of the emission zones of amorphous, polycrystalline, and aligned F8BT films are demonstrated. Electroluminescence maps of the channel region are produced by overlaying a series of images recorded during gate voltage sweeps. They show a correlation to the microcrystalline structure of the F8BT and are assumed to visualize the current density distribution within the transistor channel.
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