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Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
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10.1063/1.2838380
/content/aip/journal/apl/92/7/10.1063/1.2838380
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2838380

Figures

Image of FIG. 1.
FIG. 1.

The evolution of (a) transfer curves and (b) SS value for -IGZO TFT as a function of heating time in a vacuum chamber. The schematic diagram showing the role of (c) oxygen as a electron acceptor and (d) water molecules as a electron donor onto -IGZO surface.

Image of FIG. 2.
FIG. 2.

The comparison of the transfer curves before and after the water exposure for the device with (a) -thick and (b) -thick channels, respectively.

Tables

Generic image for table
Table I.

A comparison of the various parameters including , SS, ratio and , and for the four transistors before and after water exposure. The mobility was extracted from maximum transconductance and the was defined by the gate voltage, which induces a drain current of at of . The SS value was calculated from the maximum linear portion of vs plot.

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/content/aip/journal/apl/92/7/10.1063/1.2838380
2008-02-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2838380
10.1063/1.2838380
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