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The evolution of (a) transfer curves and (b) SS value for -IGZO TFT as a function of heating time in a vacuum chamber. The schematic diagram showing the role of (c) oxygen as a electron acceptor and (d) water molecules as a electron donor onto -IGZO surface.
The comparison of the transfer curves before and after the water exposure for the device with (a) -thick and (b) -thick channels, respectively.
A comparison of the various parameters including , SS, ratio and , and for the four transistors before and after water exposure. The mobility was extracted from maximum transconductance and the was defined by the gate voltage, which induces a drain current of at of . The SS value was calculated from the maximum linear portion of vs plot.
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