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SEM images of platinum layer as deposited (a) and after thermal annealing during at (b), principal of metallic nanodot fabrication (c).
STEM images of platinum NDs (a) with size repartition evaluated over three STEM images (b). HRTEM images of platinum NDs (c) with representation of crystallographic plans (d).
Capacitance-voltage hysteresis of platinum nanodot capacitors with bidirectional sweeps.
Flatband voltage shifts for metallic NDs and reference memory devices under sweep bias operation.
Positive and negative flatband shifts vs elapsing time.
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