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ZnO epitaxy on (111) Si using epitaxial buffer layers
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10.1063/1.2841667
/content/aip/journal/apl/92/7/10.1063/1.2841667
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2841667

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematics of the atomic arrangements of (111) Si (i), (111) (ii), and (0001) ZnO (iii). (b) Typical XRD pattern of a ZnO film grown on . “” denotes peaks due to the (111) Si substrates. (c) XRD scans of ZnO (black) and Si 440 (blue) peaks.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional TEM image of a crack-free ZnO film grown at . (b) High-resolution TEM image of the interface.

Image of FIG. 3.
FIG. 3.

Temperature-dependent PL spectra of NBE emissions of the same film studied in Fig. 2. Spectra are displaced vertically for clarity.

Image of FIG. 4.
FIG. 4.

Comparison of PL spectra of a ZnO single crystal, a ZnO film grown on (0001) sapphire at , and the same ZnO film as for Fig. 3. Spectra are vertically displaced.

Image of FIG. 5.
FIG. 5.

Temperature dependence of (a) the electron concentration and (b) the Hall mobility of the same film as for Fig. 2.

Tables

Generic image for table
Table I.

Comparison of dislocation densities and electrical properties at room temperature of thick, crack-free ZnO films grown on (111) Si and (0001) substrates.

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/content/aip/journal/apl/92/7/10.1063/1.2841667
2008-02-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2841667
10.1063/1.2841667
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