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(a) Schematics of the atomic arrangements of (111) Si (i), (111) (ii), and (0001) ZnO (iii). (b) Typical XRD pattern of a ZnO film grown on . “” denotes peaks due to the (111) Si substrates. (c) XRD scans of ZnO (black) and Si 440 (blue) peaks.
(a) Cross-sectional TEM image of a crack-free ZnO film grown at . (b) High-resolution TEM image of the interface.
Temperature-dependent PL spectra of NBE emissions of the same film studied in Fig. 2. Spectra are displaced vertically for clarity.
Comparison of PL spectra of a ZnO single crystal, a ZnO film grown on (0001) sapphire at , and the same ZnO film as for Fig. 3. Spectra are vertically displaced.
Temperature dependence of (a) the electron concentration and (b) the Hall mobility of the same film as for Fig. 2.
Comparison of dislocation densities and electrical properties at room temperature of thick, crack-free ZnO films grown on (111) Si and (0001) substrates.
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