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Passivated -type silicon: Hole injection tunable anode material for organic light emission
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/content/aip/journal/apl/92/7/10.1063/1.2857543
2008-02-19
2014-10-31

Abstract

We find that hole injection can be enhanced simply by selecting a lower-resistivity anode to match an electron injection enhancement for organic light emitting diodes with ultrathin--layer-passivated anode (Si-OLED). For a Si-OLED with ordinary AlQ electron transport layer, the optimized resistivity of the anode is ; for that with -doped Bphen electron transport layer, it decreases to . Correspondingly, the maximum power efficiency increases from , even higher than that of an indium tin oxide control device . This passivated -type silicon is a hole injection tunable anodematerial for OLED.

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Scitation: Passivated p-type silicon: Hole injection tunable anode material for organic light emission
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2857543
10.1063/1.2857543
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