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Passivated -type silicon: Hole injection tunable anode material for organic light emission
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/content/aip/journal/apl/92/7/10.1063/1.2857543
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FIG. 1.

Schematic configurations of the passivated anode OLEDs and ITO anode OLEDs each (a) with a CsPh ETL, and (b) with an AlQ ETL. There are totally four kinds of devices: devices and three kinds of control devices ( devices, ITO-CsPh device and ITO-AlQ device).

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FIG. 2.

Comparison of the 40, 5, 0.08, and devices and the control device. (a) Current density vs voltage, (b) current efficiency vs current density, (c) and power efficiency vs current density are shown.

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FIG. 3.

Comparison of the , ITO-CsPh, , ITO-AlQ, and devices. (a) Current density vs voltage, (b) current efficiency vs current density, and (c) power efficiency vs current density of the devices.

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FIG. 4.

The maximum power efficiencies (MPEs) of the , , ITO-CsPh, and ITO-AlQ devices.

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/content/aip/journal/apl/92/7/10.1063/1.2857543
2008-02-19
2014-04-19

Abstract

We find that hole injection can be enhanced simply by selecting a lower-resistivity anode to match an electron injection enhancement for organic light emitting diodes with ultrathin--layer-passivated anode (Si-OLED). For a Si-OLED with ordinary AlQ electron transport layer, the optimized resistivity of the anode is ; for that with -doped Bphen electron transport layer, it decreases to . Correspondingly, the maximum power efficiency increases from , even higher than that of an indium tin oxide control device . This passivated -type silicon is a hole injection tunable anodematerial for OLED.

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Scitation: Passivated p-type silicon: Hole injection tunable anode material for organic light emission
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2857543
10.1063/1.2857543
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