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Giant stability enhancement of rare-earth implanted light emitting devices by an additional SiON protection layer
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10.1063/1.2870203
/content/aip/journal/apl/92/7/10.1063/1.2870203
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2870203
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of the MOSLED with a thickness of and different SiON thicknesses. The inset is the reciprocal of the capacitance as a function of the thickness of the (solid triangles) and SiON (open rectangles) layers, respectively, where the dielectric constants of the and SiON layers are calculated from the slopes of the curves.

Image of FIG. 2.
FIG. 2.

The dependence of the current (a) and the EL intensity (b) on the applied voltage for the MOSLED with a thickness of and different SiON thicknesses. The diagram (c) shows the EL intensity vs the current for different SiON thicknesses.

Image of FIG. 3.
FIG. 3.

The EL threshold voltages and the breakdown voltages of the MOSLEDs with different (a) and SiON thicknesses (b). The slope of the linear fits (black lines) indicates the threshold electric field for EL and the breakdown electric field in the and SiON layers, respectively.

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/content/aip/journal/apl/92/7/10.1063/1.2870203
2008-02-20
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Giant stability enhancement of rare-earth implanted SiO2 light emitting devices by an additional SiON protection layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/7/10.1063/1.2870203
10.1063/1.2870203
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