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Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM of -beam patterned Si substrates (a) and selective growth GaAs on patterned Si (b). GaAs is selectively filled in the patterned open holes with Si exposed. The inset in (a) shows the sample structure for PL measurement.

Image of FIG. 2.
FIG. 2.

PL of QDs with excitation at different locations. The black line shows the PL from Si substrate without III-V growth. Difference of peak ratios to Si at different locations is observed due to the hole size variations and small pattern area.

Image of FIG. 3.
FIG. 3.

(a) Dependence of PL signals on excitation power at . (b) Integrated PL intensity dependence on excitation power. Dash line in (b) is a linear fitting to experimental data.

Image of FIG. 4.
FIG. 4.

(a) Dependence of PL on temperature from . (b) Peak energy of QDs emission dependence on temperature (solid square data). The bandgap change of bulk InAs is also given in solid line. (c) Integrated PL intensity vs temperature. (d) FWHM dependence on temperature (in solid squares), the dash line shows the temperature dependence trend of the normal SK QD FWHM (Refs. 2 and 21).


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Scitation: Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer